complementary silicon power transistors ...des igned for generalpurpose switching and amplifier applications. ? dc current gain e h fe = 20 70 @ i c = 4.0 adc ? collectoremitter saturation voltage e v ce(sat) = 1.1 vdc (max) @ i c = 4.0 adc ? excellent safe operating area ??????????????????????? ??????????????????????? maximum ratings ???????????? ???????????? rating ????? ????? symbol ?????? ?????? value ??? ??? unit ???????????? ???????????? collectoremitter voltage ????? ????? v ceo ?????? ?????? 60 ??? ??? vdc ???????????? ???????????? collectoremitter voltage ????? ????? v cer ?????? ?????? 70 ??? ??? vdc ???????????? ???????????? collectorbase voltage ????? ????? v cb ?????? ?????? 100 ??? ??? vdc ???????????? ???????????? emitterbase voltage ????? ????? v eb ?????? ?????? 7.0 ??? ??? vdc ???????????? ???????????? collector current e continuous ????? ????? i c ?????? ?????? 1 5 ??? ??? adc ???????????? ???????????? base current ????? ????? i b ?????? ?????? 7.0 ??? ??? adc ???????????? ???????????? total power dissipation @ t c = 25 c derate above 25 c ????? ????? p d ?????? ?????? 90 0.72 ??? ??? watts w/ c ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ????? ? ??? ? ????? t j , t stg ?????? ? ???? ? ?????? 65 to + 150 ??? ? ? ? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ????? ????? r q jc ?????? ?????? 1.39 ??? ??? c/w ???????????? ???????????? thermal resistance, junction to ambient ????? ????? r q ja ?????? ?????? 35.7 ??? ??? c/w tip3055 tip2955 figure 1. dc current gain i c , collector current (amp) 0.1 100 1000 10 1.0 2.0 0.3 7.0 10 v ce = 4.0 v t j = 25 c h fe , dc current gain 0.2 0.5 0.7 3.0 5.0 on semiconductor ? semiconductor components industries, llc, 2002 january, 2002 rev. 5 1 publication order number: tip3055/d tip3055 tip2955 15 ampere power transistors complementary silicon 60 volts 90 watts npn pnp case 340d02
tip3055 tip2955 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (1) (i c = 30 madc, i b = 0) ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 60 ???? ? ?? ? ???? e ??? ? ? ? ??? vdc ?????????????????????? ?????????????????????? collector cutoff current (v ce = 70 vdc, r be = 100 ohms) ????? ????? i cer ??? ??? e ???? ???? 1.0 ??? ??? madc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 30 vdc, i b = 0) ????? ? ??? ? ????? i ceo ??? ? ? ? ??? e ???? ? ?? ? ???? 0.7 ??? ? ? ? ??? madc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 100 vdc, v be(off) = 1.5 vdc) ????? ? ??? ? ????? i cev ??? ? ? ? ??? e ???? ? ?? ? ???? 5.0 ??? ? ? ? ??? madc ?????????????????????? ?????????????????????? emitter cutoff current (v be = 7.0 vdc, i c = 0) ????? ????? i ebo ??? ??? e ???? ???? 5.0 ??? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics (1) ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 4.0 adc, v ce = 4.0 vdc) (i c = 10 adc, v ce = 4.0 vdc) ????? ? ??? ? ? ??? ? ????? h fe ??? ? ? ? ? ? ? ??? 20 5.0 ???? ? ?? ? ? ?? ? ???? 70 e ??? ? ? ? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (i c = 4.0 adc, i b = 400 madc) (i c = 10 adc, i b = 3.3 adc) ????? ? ??? ? ????? v ce(sat) ??? ? ? ? ??? e e ???? ? ?? ? ???? 1.1 3.0 ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? baseemitter on voltage (i c = 4.0 adc, v ce = 4.0 vdc) ????? ? ??? ? ????? v be(on) ??? ? ? ? ??? e ???? ? ?? ? ???? 1.8 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? second breakdown ?????????????????????? ? ???????????????????? ? ?????????????????????? second breakdown collector current with base forward biased (v ce = 30 vdc, t = 1.0 s; nonrepetitive) ????? ? ??? ? ????? i s/b ??? ? ? ? ??? 3.0 ???? ? ?? ? ???? e ??? ? ? ? ??? adc ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? current gain e bandwidth product (i c = 0.5 adc, v ce = 10 vdc, f = 1.0 mhz) ????? ? ??? ? ????? f t ??? ? ? ? ??? 2.5 ???? ? ?? ? ???? e ??? ? ? ? ??? mhz ?????????????????????? ? ???????????????????? ? ?????????????????????? smallsignal current gain (v ce = 4.0 vdc, i c = 1.0 adc, f = 1.0 khz) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 15 ???? ? ?? ? ???? e ??? ? ? ? ??? khz (1) pulse test: pulse width = 300 m s, duty cycle 2.0%. note: for additional design curves, refer to electrical characteristics curves of 2n3055. i c , collector current (amps) 10 5.0 0.1 0.3 2.0 3.0 figure 2. maximum rated forward bias safe operating area v ce , collector-emitter voltage (volts) 1.0 2.0 4.0 6.0 10 20 0.2 0.5 1.0 20 30 50 100 40 60 secondary breakdown limit bonding wire limit thermal limit @ t c = 25 c t j = 150 c 300 m s 1.0ms 10ms dc there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 2 is based on t c = 25 c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature.
tip3055 tip2955 http://onsemi.com 3 package dimensions case 340d02 issue e style 1: pin 1. base 2. collector 3. emitter 4. collector a d v g k s l u b q 123 4 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. e c j h dim min max min max inches millimeters a --- 20.35 --- 0.801 b 14.70 15.20 0.579 0.598 c 4.70 4.90 0.185 0.193 d 1.10 1.30 0.043 0.051 e 1.17 1.37 0.046 0.054 g 5.40 5.55 0.213 0.219 h 2.00 3.00 0.079 0.118 j 0.50 0.78 0.020 0.031 k 31.00 ref 1.220 ref l --- 16.20 --- 0.638 q 4.00 4.10 0.158 0.161 s 17.80 18.20 0.701 0.717 u 4.00 ref 0.157 ref v 1.75 ref 0.069
tip3055 tip2955 http://onsemi.com 4 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. tip3055/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
|
